On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/f noise in MOSFETs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. On the additivity of generation–recombination spectra. Part 1: Conduction band with two centres
2. On the additivity of generation-recombination spectra. Part 2: 1/f noise
3. Measurement of current noise in m.o.s. transistors from 5×10−5 to 1 Hz
4. Relation between variance and sample duration of 1/f noise signals
5. Low phase noise design of microwave oscillators (invited article)
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