Measurement of current noise in m.o.s. transistors from 5×10−5 to 1 Hz-Reference-Cited by-同舟云学术

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Measurement of current noise in m.o.s. transistors from 5×10−5 to 1 Hz

Published:1968 Issue:4 Volume:35 Page:212
ISSN:0033-7722
Container-title:Radio and Electronic Engineer
language:en
Short-container-title:Radio Electron. Eng. UK

Author:

Mansour I.R M.,Hawkins R.J.,Bloodworth G.G.

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering,General Medicine

Link

https://digital-library.theiet.org/content/journals/10.1049/ree.1968.0031?crawler=true&mimetype=application/pdf

Reference8 articles.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Calculation of flicker noise power;Automatic Control and Computer Sciences;2016-01

2. Programmable, very low noise current source;Review of Scientific Instruments;2014-12

3. On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/f noise in MOSFETs;Physica B: Condensed Matter;2005-03

4. Noise measurements in MOS transistor and vibrating-capacitor electrometers;Journal of Physics E: Scientific Instruments;1978-05

5. Low frequency noise measurements on silicon-on-sapphire (SOS) MOS transistors;Solid-State Electronics;1977-11

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