Impact of temperature on negative capacitance field‐effect transistor-Reference-Cited by-同舟云学术

Impact of temperature on negative capacitance field‐effect transistor

Published:2015-01 Issue:1 Volume:51 Page:106-108
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Jo Jaesung¹,Shin Changhwan¹

Affiliation:

1. School of Electrical and Computer EngineeringCollege of EngineeringUniversity of SeoulSeoulRepublic of Korea

Funder

National Research Foundation of Korea

Ministry of Education

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.3515

Reference4 articles.

1. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

2. Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures;Khan A.I.;Appl. Phys. Lett.,2011

3. Tuned dielectric, pyroelectric and piezoelectric properties of ferroelectric P(VDF–TrFE) thin films by using mechanical loads;Bai G.;J. Appl. Phys.,2012

4. Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor;Salvatore G.A.;Appl. Phys. Lett.,2012

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