Temperature Sensitive Analysis of Junctionless Nanowire Ferroelectric Field Effect Transistor (JNFe- FET) for Enhanced Analog Performance-Reference-Cited by-同舟云学术

Temperature Sensitive Analysis of Junctionless Nanowire Ferroelectric Field Effect Transistor (JNFe- FET) for Enhanced Analog Performance

Published:2023-04-07 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Devices for Integrated Circuit (DevIC)
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Author:

Garg Shalu¹,Haldar Subhasis²,Kaur Jasdeep¹,Gupta R S³,Goel Anubha³

Affiliation:

1. IGDTUW, for women Kashmere Gate,dept. of electronics and communication engineering,Delhi,India,110006

2. Motilal Nehru College,University of Delhi, South Campus,dept. name of physics,Delhi,India,110042

3. Maharaja Agrasen Institute of Technology,dept. of electronics and communication engineering,Rohini,Delhi,India,110086

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10134754/10134560/10134966.pdf?arnumber=10134966

Reference36 articles.

1. Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

2. Temperature sensitive analyticak analysis of gate stack dual metal nanowire fieldeffect transistor (4H-SIC);neeraj;International Journal of Numerical Modelling Electronic Networks Devices and Fields,2022

3. HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention

4. High temperature performance of Si:HfO2 based long channel Double Gate Ferroelectric Junctionless Transistors

5. Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

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