Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector-Reference-Cited by-同舟云学术

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Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

Published:2008-09-09 Issue:10 Volume:23 Page:105015
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhang Shuang,Zhao D G,Jiang D S,Liu W B,Duan L H,Wang Y T,Zhu J J,Liu Z S,Zhang S M,Yang Hui

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. GaN-based modulation doped FETs and UV detectors

2. Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes

3. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers

4. High-performance GaN p-n junction photodetectors for solar ultraviolet applications

5. High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the thickness of frontal platinum metallic layer on the electro-optical characteristics of GaN-based Schottky ultraviolet photodetectors;Semiconductor Physics, Quantum Electronics and Optoelectronics;2022-10-06

2. Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer;Optik;2021-11

3. The effect of Ga-doped nanocrystalline ZnO electrode on deep-ultraviolet enhanced GaN photodetector;Applied Physics Letters;2013-05-27

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