AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide

Published:2007-07-19 Issue:8 Volume:22 Page:947-951
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Gregušová D,Stoklas R,Čičo K,Lalinský T,Kordoš P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

2. Trapping effects in GaN and SiC microwave FETs

3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

4. Strain-engineered novel III–N electronic devices with high quality dielectric/semiconductor interfaces

5. Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors

Cited by 64 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of multiple conduction channels on MISHEMT's intrinsic voltage gain;2022 36th Symposium on Microelectronics Technology (SBMICRO);2022-08-22

2. Effect of Gate Dielectric Thickness on the Performance of Top-Down ZnO Nanowire Field-Effect Transistors;Lecture Notes in Electrical Engineering;2022

3. On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers;Applied Physics Letters;2021-03-22

4. Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs;IEEE Journal of the Electron Devices Society;2021

5. Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs;IEEE Transactions on Device and Materials Reliability;2020-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3