Effect of Gate Dielectric Thickness on the Performance of Top-Down ZnO Nanowire Field-Effect Transistors
Author:
Ghazali Nor AzlinORCID, Mohamed Mohamed Fauzi PackeerORCID, Akbar Muhammad Firdaus, Chong Harold M. H.
Publisher
Springer Singapore
Reference17 articles.
1. Kim, S.G., Luisier, M., Boykin, T.B., Klimeck, G.: Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors. Appl. Phys. Lett. 99(23), 232107 (2011) 2. Jia, C., Lin, Z., Huang, Y., Duan, X.: Nanowire electronics: from nanoscale to macroscale. Chem. Rev. 119(15) (2019) 3. McIntyre, P.C., Fontcuberta i Morral, A.: Semiconductor nanowires: to grow or not to grow? Materials Today Nano, vol. 9, p. 100058 (2020) 4. Baraban, L., Ibarlucea, B., Baek, E., Cuniberti, G.: Hybrid Silicon Nanowire Devices and Their Functional Diversity. Adv. Sci., vol. 6, no. 15 (2019) 5. Das, S., Gates, A.J., Abdu, H.A., Rose, G.S., Picconatto, C.A., Ellenbogen, J.C.: Designs for ultra-tiny, special-purpose nanoelectronic circuits. IEEE Trans. Circuits Syst. I Regul. Pap. 54(11), 2528–2540 (2007)
|
|