Evidence for the role of the indirect-gap electron states in tunnelling through thin AlAs barriers-Reference-Cited by-同舟云学术

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Evidence for the role of the indirect-gap electron states in tunnelling through thin AlAs barriers

Published:1987-04-01 Issue:4 Volume:2 Page:244-247
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Couch N R,Kelly M J,Kerr T M,Britton E G,Stobbs W M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Pseudo‐quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes

2. Low dark current GaAs/AlAs graded-parameter superlattice PIN photodetector

3. Tunneling in a finite superlattice

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiband tight-binding approach to tunneling in semiconductor heterostructures: Application to ΓXtransfer in GaAs;Physical Review B;1994-06-15

2. Coupling between Γ- andX-type envelope functions at GaAs/Al(Ga)As interfaces;Physical Review B;1993-10-15

3. Quantum hydrodynamical approach to scattering in multilayer systems;Physics Letters A;1992-01

4. The characterisation of GaAs/(Al,Ga)As heterostructure interface roughness using Fresnel analysis;Ultramicroscopy;1991-09

5. Analysis and design of low-dimensional structures and devices using strain: I. Hydrostatic pressure effects;Semiconductor Science and Technology;1990-12-01

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