Low dark current GaAs/AlAs graded-parameter superlattice PIN photodetector
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19860436?crawler=true&mimetype=application/pdf
Reference4 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The growth and characterisation of back-gated high mobility two-dimensional electron gas structures;Journal of Crystal Growth;1991-05
2. High-pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier structures of GaAs/AlAs;Semiconductor Science and Technology;1989-09-01
3. Indirect gap resonant tunneling in GaAs/AlAs;Solid State Communications;1987-10
4. Evidence for the role of the indirect-gap electron states in tunnelling through thin AlAs barriers;Semiconductor Science and Technology;1987-04-01
5. Novel Tunnelling Structures: Physics and Device Implications;Physics and Applications of Quantum Wells and Superlattices;1987
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