The growth and characterisation of back-gated high mobility two-dimensional electron gas structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. In situ grown Schottky gates on GaAs/AlGaAs heterojunctions
2. Mobility of the two-dimensional electron gas at selectively dopedn-typeAlxGa1−xAs/GaAs heterojunctions with controlled electron concentrations
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4. The fabrication of submicron gated wires on GaAs/AlGaAs heterostructures using low energy Ga ion beam damage
5. One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs Heterojunction
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1. Impact of Heterostructure Design on Transport Properties in the Second Landau Level ofIn SituBack-Gated Two-Dimensional Electron Gases;Physical Review Applied;2015-06-08
2. Interface between low‐temperature grown GaAs and undoped GaAs as a conduction barrier for back gates;Applied Physics Letters;1995-06-19
3. Transition from one- to two-subband occupancy in the 2DEG of back-gated modulation-doped GaAs-AlxGa1−xAs heterostructures;Physical Review B;1995-06-15
4. Effect of the proximity of an ex situ patterned interface on the quality of two-dimensional electron gases at GaAs/AlGaAs heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-03
5. Low temperature operation of Ge‐Ag ohmic contacts to a high mobility two dimensional electron gas;Journal of Applied Physics;1993-11
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