Low temperature operation of Ge‐Ag ohmic contacts to a high mobility two dimensional electron gas-Reference-Cited by-同舟云学术

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Low temperature operation of Ge‐Ag ohmic contacts to a high mobility two dimensional electron gas

Published:1993-11 Issue:9 Volume:74 Page:5883-5885
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chabasseur‐Molyneux V.,Frost J. E. F.,Tribble M. J.,Grimshaw M. P.,Ritchie D. A.,Churchill A. C.,Jones G. A. C.,Pepper M.,Burroughes J. H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.354163

Reference12 articles.

1. Quantum Transport in Semiconductor Nanostructures

2. The growth and characterisation of back-gated high mobility two-dimensional electron gas structures

3. Back‐gated split‐gate transistor: A one‐dimensional ballistic channel with variable Fermi energy

4. The fabrication of a back-gated high electron mobility transistor-a novel approach using MBE regrowth on an in situ ion beam patterned epilayer

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of the Ag-Based Ohmic Contact to the Realization of Thermally-Stable InAlAs/InGaAs/InP High Electron Mobility Transistors;Japanese Journal of Applied Physics;2006-10-06

2. Electrical and structural investigations of Ag-based Ohmic contacts for InAlAs∕InGaAs∕InP high electron mobility transistors;Applied Physics Letters;2006-08-14

3. Thermally stable Ge/Ag/Ni Ohmic contact for InAlAs/InGaAs/InP HEMTs;IEEE Electron Device Letters;2006-01

4. Contact resistances of NiGeAu, PdGeTiPt, and TiPd ohmic contacts to GaAs and their temperature dependence from 4.2 to 350 K;Applied Physics Letters;1996-12-30

5. Transport through an array of small ohmic contacts alloyed to the two‐dimensional electron gas of a GaAs/AlGaAs heterostructure;Applied Physics Letters;1996-06-10

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