Pseudo‐quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95094
Reference10 articles.
1. New rectifying semiconductor structure by molecular beam epitaxy
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4. Semiconductor structures for repeated velocity overshoot
5. Energy-gap discontinuities and effective masses forGaAs−AlxGa1−xAsquantum wells
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