InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3549199
Reference16 articles.
1. InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s
2. Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation
3. InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies
4. GaAs-based heterojunction bipolar transistors for very high performance electronic circuits
5. Optimum emitter grading for heterojunction bipolar transistors
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy;Journal of Crystal Growth;2013-09
2. Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE;IEEE Transactions on Electron Devices;2012-07
3. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts;Semiconductors;2012-04
4. Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts;Semiconductor Science and Technology;2012-02-10
5. InP DHBT-Based IC Technology for 100-Gb/s Ethernet;IEEE Transactions on Electron Devices;2011-08
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