InP DHBT-Based IC Technology for 100-Gb/s Ethernet
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid State Physics, Freiburg, Germany
2. Test and Measurement Division, Rohde & Schwarz, Munich, Germany
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/5959271/05893930.pdf?arnumber=5893930
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InP DHBT Linear Modulator Driver With a 3-Vppd PAM-4 Output Swing at 90 GBaud: From Enhanced Transistor Modeling to Integrated Circuit Design;IEEE Transactions on Microwave Theory and Techniques;2023
2. Amplifiers;Fundamentals of RF and Microwave Techniques and Technologies;2023
3. 0.7-$\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BVCE0 for High Speed and High Frequency Integrated Circuits;IEEE Journal of the Electron Devices Society;2019
4. Downsampling of optical frequency combs;Journal of the Optical Society of America B;2018-06-25
5. 140 GHz power amplifier based on 0.5 µm composite collector InP DHBT;IEICE Electronics Express;2017
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