Multiband tight-binding approach to tunneling in semiconductor heterostructures: Application to ΓXtransfer in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.16494/fulltext
Reference37 articles.
1. Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition
2. Tunneling through indirect-gap semiconductor barriers
3. Evidence for the role of the indirect-gap electron states in tunnelling through thin AlAs barriers
4. Resonant tunneling viaX‐point states in AlAs‐GaAs‐AlAs heterostructures
5. Phonon coupling andX−Γmixing in GaAs-AlAs short-period superlattices
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