A pseudopotential calculation of the subband structure over the two-dimensional Brillouin zone in a GaAs quantum well
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/5/i=10/a=004/pdf
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1. Effect of conduction‐band nonparabolicity on quantized energy levels of a quantum well
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4. Calculations of bound states in the valence band of AlAs/GaAs/AlAs and AlGaAs/GaAs/AlGaAs quantum wells
5. Enhancement of nonparabolicity effects in a quantum well
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1. General R-matrix approach for integrating the multiband k⋅p equation in layered semiconductor structures;Computer Physics Communications;2012-01
2. Hole states in GaAs/AlAs double-barrier structures and multiple quantum wells;Semiconductor Science and Technology;1994-03-01
3. Hole states in GaAs/AlAs heterostructures and the limitations of the Luttinger model;Solid State Communications;1994-02
4. A microscopic calculation for hole tunnelling in type-II InAs/GaSb structures;Semiconductor Science and Technology;1994-02-01
5. Matching of electronic wavefunctions and envelope functions at GaAs/AlAs interfaces;Journal of Physics: Condensed Matter;1992-03-09
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