The eigenvalues of very narrow quantum wells
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/1/i=4/a=001/pdf
Reference14 articles.
1. Staggered band alignments in AlGaAs heterojunctions and the determination of valence‐band offsets
2. Band structure of indium antimonide
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A pseudopotential calculation of the subband structure over the two-dimensional Brillouin zone in a GaAs quantum well;Semiconductor Science and Technology;1990-10-01
2. Connection of envelope functions at semiconductor heterointerfaces. I. Interface matrix calculated in simplest models;Physical Review B;1989-12-15
3. Indirect gap resonant tunneling in GaAs/AlAs;Solid State Communications;1987-10
4. Calculations of bound states in the valence band of AlAs/GaAs/AlAs and AlGaAs/GaAs/AlGaAs quantum wells;Semiconductor Science and Technology;1987-09-01
5. Scattering matrix theory of transport in heterostructures;Semiconductor Science and Technology;1986-10-01
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