A microscopic calculation for hole tunnelling in type-II InAs/GaSb structures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/9/i=2/a=008/pdf
Reference27 articles.
1. Interband tunneling in polytype GaSb/AlSb/InAs heterostructures
2. Physics of resonant tunneling. The one-dimensional double-barrier case
3. New negative differential resistance device based on resonant interband tunneling
4. Negative differential resistance in AlGaSb/InAs single‐barrier heterostructures at room temperature
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2. DESIGN OF SEMICONDUCTOR HETEROSTRUCTURES VIA INVERSE QUANTUM SCATTERING;Modern Physics Letters B;2008-09-10
3. Multiband Riccati equation for electronic structure and transport in type-II heterostructures;Microelectronics Journal;2007-03
4. Dresselhaus-like spin splitting in (hkl) InAs/GaSb superlattices;Semiconductor Science and Technology;2004-02-19
5. Bond Orbital Model with Microscopic Interface Effects;Japanese Journal of Applied Physics;2002-01-15
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