Matching of electronic wavefunctions and envelope functions at GaAs/AlAs interfaces
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/4/i=10/a=021/pdf
Reference28 articles.
1. Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices
2. Connection of envelope functions at semiconductor heterointerfaces. I. Interface matrix calculated in simplest models
3. Energy band structure of AlxGa1-xAs
4. Band Offsets in Lattice-Matched Heterojunctions: A Model and First-Principles Calculations for GaAs/AlAs
5. Superlattice band structure in the envelope-function approximation
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1. Accurate quadratic-response approximation for the self-consistent pseudopotential of semiconductor nanostructures;Physical Review B;2007-07-23
2. First-principles envelope-function theory for lattice-matched semiconductor heterostructures;Physical Review B;2005-10-28
3. Electron tunneling through thin barrier with smooth potential at GaAs/AlAs(001) heterointerfaces;Physics of the Solid State;2000-04
4. Generalization of the effective mass method for semiconductor structures with atomically sharp heterojunctions;Journal of Experimental and Theoretical Physics;1999-11
5. Connection Rules versus Differential Equations for Envelope Functions in Abrupt Heterostructures;Physical Review Letters;1998-04-27
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