Electrical properties of Ge-implanted and oxidized Si
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=1/a=013/pdf
Reference23 articles.
1. Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
2. Channeling effect for low energy ion implantation in Si
3. Germanium Implantation into Silicon: An Alternate Pre‐Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Formation
4. Improved CMOS field isolation using germanium/boron implantation
5. Oxidation of silicon-germanium alloys
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1. Thermal oxidation of Ge-implanted Si: Role of defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02
2. Characterization of Si Nanocrystals;Silicon Nanocrystals;2010-04-29
3. Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing;Thin Solid Films;2010-02
4. Evolution of Vibrational Modes of SiO2 During the Formation of Ge and Si Nanocrystals by Ion Implantation and Magnetron Sputtering;Journal of Nanoscience and Nanotechnology;2010-01-01
5. Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure;Journal of Applied Physics;2009-11-15
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