DX centre in Si-doped AlxGa1-xAs: charge state and capture mechanism-Reference-Cited by-同舟云学术

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DX centre in Si-doped AlxGa1-xAs: charge state and capture mechanism

Published:1992-01-01 Issue:1 Volume:7 Page:97-102
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Mosser V,Contreras S,Lorenzini P,Robert J L,Piotrzkowski R,Zawadzki W

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=1/a=017/pdf

Reference28 articles.

1. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys

2. Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys

3. Two Electron D-State of DX-Centers

4. Evidence against the negative-charge-state model for theDXcenter inn-type GaAs

5. Chadi, Chang, and Walukiewicz reply

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contact pressure measurement using silicon-based AlxGa1−xAs semiconductor pressure sensors;Sensors and Actuators A: Physical;2005-02

2. Photoionization cross-section of the DX center in Te-doped AlxGa1−xSb;Journal of Applied Physics;1998-01

3. Observation of deep donor center related tunneling peak in the AlxGa1−xAs/AlAs/AlxGa1−xAs/AlAs/AlxGa1−xAs (0.40≤x≤0.50) resonant tunneling diodes;Applied Physics Letters;1993-08-02

4. Parameters of multilevel structure of the DX centre in GaAlAs from pressure studies of the Hall effect;Semiconductor Science and Technology;1992-01-01

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