Evidence against the negative-charge-state model for theDXcenter inn-type GaAs
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.62.1922/fulltext
Reference7 articles.
1. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
2. Investigation of theDXcenter in heavily dopedn-GaAs
3. The k.p interaction in InP and GaAs from the band-gap dependence of the effective mass
4. The electron effective mass in heavily doped GaAs
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1. Spatial correlation effects in the charged impurity distribution on the electronic properties of δ-doped structures;physica status solidi (b);2003-05
2. Hydrostatic pressure studies of GaAs tunnel diodes;Journal of Applied Physics;1998-05-15
3. Deep levels in Si-doped AlxGa1 − xAs layers;Applied Surface Science;1997-06
4. Coexistence of theDXcenter with nonmetastable states of the donor impurity in Si-dopedAlxGa1−xAs: Effects on the low-temperature electron mobility;Physical Review B;1996-04-15
5. Hot electron capture in highly doped GaAs;Journal of Applied Physics;1995-05
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