Parameters of multilevel structure of the DX centre in GaAlAs from pressure studies of the Hall effect-Reference-Cited by-同舟云学术

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Parameters of multilevel structure of the DX centre in GaAlAs from pressure studies of the Hall effect

Published:1992-01-01 Issue:1 Volume:7 Page:103-108
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Piotrzkowski R,Litwin-Staszewska E,Lorenzini P,Robert J L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=1/a=018/pdf

Reference12 articles.

1. Effects of the local environment on the properties ofDXcenters in Si‐doped GaAs and dilute AlxGa1−xAs alloys

2. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evidence of threeDXcenters in Al0.28Ga0.72As:Si from Hall experiments;Journal of Applied Physics;2003-06-15

2. On the applicability of InGaP:Si and AlGaAs:Sn piezoresistive pressure sensors in the 2.5 GPa range;Sensors and Actuators A: Physical;1999-12

3. New type of persistent photoconductivity related to DX-center: the study of interband PPC in Si-doped AlGaAs;Physica B: Condensed Matter;1999-12

4. Photo-ionization spectra for alloy-induced configurations of Si–DX center in AlGaAs;Physica B: Condensed Matter;1999-12

5. Pressure and Hall sensors: what does MBE allow to do?;Journal of Crystal Growth;1999-05

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