On the applicability of InGaP:Si and AlGaAs:Sn piezoresistive pressure sensors in the 2.5 GPa range-Reference-Cited by-同舟云学术

On the applicability of InGaP:Si and AlGaAs:Sn piezoresistive pressure sensors in the 2.5 GPa range

Published:1999-12 Issue:2-3 Volume:78 Page:130-137
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Litwin-Staszewska E,Trzeciakowski W,Dmowski L,Piotrzkowski R,Gonzalez L,Żytkiewicz Z

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. W.B. Holzapfel, in: J. Bortfeldt, B. Kramer (Eds.), Landoldt-Bornstein, Units and Fundamental Constants in Physics and Chemistry, Springer, 1991, p. 2.177.

2. W.B. Holzapfel, Limits in present static pressure metrology, in: W. Trzeciakowski (Ed.), High Pressure Science and Technology, World Scientific, 1996, p. 69.

3. T.P. Sosin, W. Trzeciakowski, M. Hopkinson, InAsP quantum wells as pressure calibrants, Proceedings of the 23rd International Conference on the Physics of Semiconductors, in: M. Scheffler, R. Zimmermann (Eds.), Berlin, 1996, p. 3279.

4. L. Dmowski, E. Litwin-Staszewska, Variation of pressure coefficient of manganin sensors at low temperatures, accepted in Measurement Science and Technology (1999).

5. Semiconductor pressure sensors as seen by a physicist;Trzeciakowski;Japanese Journal of Applied Physics,1993

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