Low-distortion AlGaAs/InGaAs power HFETs with quantum-doped graded-like channels
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/
2. A low-distortion K-band GaAs power FET
3. Device linearity improvement by Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructure doped-channel FETs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate;Semiconductor Science and Technology;2006-12-22
2. Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model;IEEE Transactions on Microwave Theory and Techniques;2001
3. Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors;Applied Physics Letters;1999-04-05
4. Field-effect-transistor and real-space-transfer behaviors by double-heterojunction doped channel;Thin Solid Films;1999-02
5. Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors;Semiconductor Science and Technology;1998-07-01
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