Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123725
Reference9 articles.
1. Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0≤x≤0.25) doped-channel field-effect transistors (DCFET's)
2. Two step doping channel FET with symmetric normally on and normally off characteristics
3. DC and AC characteristics of AL/sub 0.25/Ga/sub 0.75/As/GaAs quantum-well delta-doped channel FET grown by LP-MOCVD
4. Low-distortion AlGaAs/InGaAs power HFETs with quantum-doped graded-like channels
5. An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a heavily doped channel
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fringing effects of V-shape gate metal on GaAs/InGa/PInGaAs doped-channel field-effect transistors;Semiconductor Science and Technology;2005-08-01
2. Sub-0.5-µm gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glass;Semiconductor Science and Technology;2003-11-03
3. Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure;Semiconductor Science and Technology;2000-05-24
4. An inverted delta-doped V-shaped InGaP/In/sub x/Ga/sub 1-x/As pseudomorphic high electron mobility transistor;Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)
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