Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a heavily doped channel
2. A pseudomorphic AlGaAs/n/sup +/-InGaAs metal-insulator-doped channel FET for broad-band, large-signal applications
3. DC and AC characteristics of AL/sub 0.25/Ga/sub 0.75/As/GaAs quantum-well delta-doped channel FET grown by LP-MOCVD
4. Device linearity improvement by Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructure doped-channel FETs
5. Comparison of GaAs, InGaAs, and GaAs/InGaAs Doped Channel Field-Effect Transistors with AlGaAs Insulator Gate
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1. Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density;Semiconductors;2011-10
2. Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts;Solid-State Electronics;2010-03
3. Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor;Semiconductor Science and Technology;2008-11-21
4. Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors;Semiconductor Science and Technology;2008-10-21
5. Application of Schottky Bulk-Layer Design on Double-Heterojunction Pseudomorphic AlGaAs/InGaAs/AlGaAs High Electron Mobility Transistors (DH-HEMTs);Advanced Materials Research;2008-06
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