Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density-Reference-Cited by-同舟云学术

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Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density

Published:2011-10 Issue:10 Volume:45 Page:1321-1326
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Khabibullin R. A.,Vasil’evskii I. S.,Galiev G. B.,Klimov E. A.,Ponomarev D. S.,Lunin R. A.,Kulbachinskii V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611100125.pdf

Reference33 articles.

1. G. M. Dunn, A. Phillips, and P. J. Topham, Semicond. Sci. Technol. 16, 562 (2001).

2. A. Yu. Egorov, A. G. Gladyshev, E. V. Nikitina, D. V. Denisov, N. K. Polyakov, E. V. Pirogov, and A. A. Gorbatsevich, Semiconductors 44, 919 (2010).

3. I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, V. G. Mokerov, S. S. Shirokov, R. M. Imamov, and I. A. Subbotin, Semiconductors 42, 1084 (2008).

4. Y. Gui, S. Guo, G. Zheng, J. Chu, X. Fang, K. Qiu, and X. Wang, Appl. Phys. Lett. 76, 1309 (2000).

5. H. M. Shieh, W. C. Hsu, and C. L. Wu, Appl. Phys. Lett. 63, 509 (1993).

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