Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126018
Reference17 articles.
1. High-power V-band pseudomorphic InGaAs HEMT
2. High efficiency microwave power AlGaAs/InGaAs PHEMTs fabricated by dry etch single gate recess
3. A 94-GHz monolithic balanced power amplifier using 0.1-μm gate GaAs-based HEMT MMIC production process technology
4. A 60-GHz high efficiency monolithic power amplifier using 0.1-μm PHEMT's
5. High-efficiency GaAs-based pHEMT C-band power amplifier
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1. Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density;Semiconductors;2011-10
2. Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (311)A GaAs substrates;Journal of Luminescence;2011-01
3. Double subband occupation of the two-dimensional electron gas in InxAl1−xN/AlN/GaN/AlN heterostructures with a low indium content (0.064≤x≤0.140) barrier;Thin Solid Films;2010-07
4. Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness;Acta Physica Sinica;2007
5. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors;Acta Physica Sinica;2006
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