Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation-Reference-Cited by-同舟云学术

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Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

Published:2014-03-28 Issue:5 Volume:29 Page:055002
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Jiang Y,Wang Q P,Tamai K,Li L A,Shinkai S,Miyashita T,Motoyama S-I,Wang D J,Ao J-P,Ohno Y

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=5/a=055002/pdf

Reference21 articles.

1. High-voltage normally off GaN MOSFETs on sapphire substrates

2. Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage

3. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

4. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

5. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boron-Implanted Termination Structures for Vertical GaN Power Devices with Highly Enhanced Breakdown Voltage;IEEJ Transactions on Electronics, Information and Systems;2024-03-01

2. Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination*;Chinese Physics B;2020-03-01

3. Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures;Science China Physics, Mechanics & Astronomy;2018-10-22

4. Band structure model of modified Ge for optical device application;Acta Physica Sinica;2018

5. Improvement of device isolation using field implantation for GaN MOSFETs;Semiconductor Science and Technology;2016-02-15

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