Improvement of device isolation using field implantation for GaN MOSFETs-Reference-Cited by-同舟云学术

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Improvement of device isolation using field implantation for GaN MOSFETs

Published:2016-02-15 Issue:3 Volume:31 Page:035019
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Jiang Ying,Wang Qingpeng,Zhang Fuzhe,Li Liuan,Shinkai Satoko,Wang Dejun,Ao Jin-Ping

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=3/a=035019/pdf

Reference27 articles.

1. Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

2. High-Performance GaN MOSFET With High-$\kappa$$\hbox{LaAlO}_{3}/\hbox{SiO}_{2}$ Gate Dielectric

3. Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

4. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation;IEEE Electron Device Letters;2023-07

2. Review of Recent Progress on Vertical GaN-Based PN Diodes;Nanoscale Research Letters;2021-06-07

3. Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination*;Chinese Physics B;2020-03-01

4. Oxygen Ion Implantation Induced Effects in GaN Epilayer;Springer Proceedings in Physics;2019

5. High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination;Applied Physics Letters;2018-07-09

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