High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination
Author:
Affiliation:
1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
2. Qorvo, Inc., 500 West Renner Road, Richardson, Texas 75080, USA
3. MicroLink Devices, 6457 West Howard Street, Niles, Illinois 60714, USA
Funder
Advanced Research Projects Agency - Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5035267
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1. GaN Transistors for Efficient Power Conversion
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5. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
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