Impact of the Al/Hf ratio on the electrical properties and band alignments of atomic-layer-deposited HfO2/Al2O3on S-passivated GaAs substrates-Reference-Cited by-同舟云学术

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Impact of the Al/Hf ratio on the electrical properties and band alignments of atomic-layer-deposited HfO2/Al2O3on S-passivated GaAs substrates

Published:2010-04-09 Issue:5 Volume:25 Page:055012
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Gong You-Pin,Li Ai-Dong,Li Xue-Fei,Li Hui,Zhai Hai-Fai,Wu Di

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant

2. Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

3. Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs

4. Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

5. HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition

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