Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2814052
Reference20 articles.
1. Proceedings of 1977 Inst. Solid State Circuits Conf.;Ishikawa H.,1997
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4. High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates
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