Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2840132
Reference23 articles.
1. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
2. Characterization of atomic-layer-deposited Al2O3∕GaAs interface improved by NH3 plasma pretreatment
3. GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
4. Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs
5. Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer
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