On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures-Reference-Cited by-同舟云学术

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On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures

Published:1997-09-01 Issue:9 Volume:12 Page:1064-1071
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lander R J P,Kearney M J,Horrell A I,Parker E H C,Phillips P J,Whall T E

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. p-channel SiGe heterostructures for field effect applications

2. High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si

3. High hole mobility in SiGe alloys for device applications

4. High-transconductance p-type SiGe modulation-doped field-effect transistor

5. Mobility simulation of a novel Si/SiGe FET structure

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures;Strain Engineering in Functional Materials and Devices;2023-03-10

2. High mobility Ge 2DHG based MODFETs for low-temperature applications;Semiconductor Science and Technology;2023-01-27

3. Ultra-high hole mobility exceeding one million in a strained germanium quantum well;Applied Physics Letters;2012-10-22

4. Electron scattering from polarization charges bound on a rough interface of polar heterostructures;Journal of Applied Physics;2011-06

5. Mobility of holes in a Si/Si0.8Ge0.2/Si metal oxide semiconductor field effect transistor;Thin Solid Films;2010-07

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