Enhanced room temperature mobilities and reduced parallel conduction in hydrogen passivated Si/SiGe heterostructures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
2. High-mobility Si and Ge structures
3. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
4. Observation of the fractional quantum Hall effect in Si/SiGe heterostructures
5. Strained Si/SiGe heterostructures for device applications
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si∕SiGe resonant interband tunnel diodes;Electronics Letters;2006
2. Electronic transport properties of SiGe alloys and heterostructures grown by Sb assisted MBE;Materials Science and Engineering: B;2002-02
3. Blistering on Silicon Surface Caused by Gettering of Hydrogen on Post-Implantation Defects;MRS Proceedings;2001
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