SiGe δ-channel field-effect transistors on SIMOX substrates
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures
2. Analytical modeling of threshold voltages in p-channel Si/SiGe/Si MOS structures
3. 1/f Noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under fowler-nordheim stress
4. High-performance strained Si/SiGe pMOS devices with multiple quantum wells
5. 1/f noise in Si and si/sub 0.7/Ge/sub 0.3/ pMOSFETs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Improvement of High-$k$/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure;IEEE Transactions on Device and Materials Reliability;2011-03
2. Fabrication of Si1−xGex alloy nanowire field-effect transistors;Applied Physics Letters;2007-07-16
3. Impact of SiN on Performance in Novel Complementary Metal–Oxide–Semiconductor Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology;Japanese Journal of Applied Physics;2007-05-08
4. Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology;IEEE Electron Device Letters;2006-01
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