1/f Noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under fowler-nordheim stress-Reference-Cited by-同舟云学术

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1/f Noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under fowler-nordheim stress

Published:2003-04 Issue:4 Volume:50 Page:1152-1156
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Young-Joo Song ,Jung-Wook Lim ,Mheen B.,Sang-Hoon Kim ,Hyun-Chul Bae ,Jin-Young Kang ,Jeong-Hoon Kim ,Jong-In Song ,Kyung-Wan Park ,Kyu-Hwan Shim

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/27160/01206908.pdf?arnumber=1206908

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Highly Compressive Interlayer-Dielectric-$ \hbox{SiN}_{x}$ Stressing Layer on $\hbox{1}/f$ Noise and Reliability of SiGe-Channel pMOSFETs;IEEE Electron Device Letters;2010-12

2. Flicker-Noise Improvement in 100-nm $L_{g}\ \hbox{Si}_{0.50}\hbox{Ge}_{0.50}$ Strained Quantum-Well Transistors Using Ultrathin Si Cap Layer;IEEE Electron Device Letters;2010-01

3. 1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack;Solid-State Electronics;2009-11

4. Impact strain engineering on gate stack quality and reliability;Solid-State Electronics;2008-08

5. The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si0.88Ge0.12 channel grown on bulk Si and a PD-SOI substrate;Semiconductor Science and Technology;2007-12-19

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