Fabrication of Si1−xGex alloy nanowire field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2753722
Reference27 articles.
1. O. Madelung, In Semiconductors: Data Handbook, 2nd ed. (Springer, Berlin, 1996), Vol. 2, p. 11.
2. Si/SiGe heterostructures: from material and physics to devices and circuits
3. Band-Gap Modulation in Single-Crystalline Si1-xGex Nanowires
4. Quantum size effects on photoluminescence in ultrafine Si particles
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