Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel-Reference-Cited by-同舟云学术

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Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Published:2006-04-21 Issue:6 Volume:21 Page:781-785
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Huang Dong-Hai,Hsu Wei-Chou,Lin Yu-Shyan,Wu Yue-Huei,Hsu Rong-Tay,Huang Juin-Chin,Liao Yin-Kai

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. The state-of-the-art of GaAs and InP power devices and amplifiers

2. Fabrication and characteristics of 0.12 µm AlGaAs/InGaAs/GaAs pseudomorphic HEMT using a silicon nitride assisted process

3. Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP High-Electron-Mobility Structures on GaAs Substrates

4. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors

5. Fringing effects of V-shape gate metal on GaAs/InGa/PInGaAs doped-channel field-effect transistors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Temperature-Dependent Studies of Metamorphic High Electron Mobility Transistors With Double and Single $\delta$-Doped Structures;IEEE Transactions on Electron Devices;2011-12

2. Investigations of Novel $\Gamma$-Gate MOS-HEMTs by Ozone Water Oxidation and Shifted Exposure Techniques;IEEE Transactions on Electron Devices;2011-09

3. Study of Metamorphic Co-Integrated Heterostructure Bipolar and Field-Effect Transistors (BiFETs);Journal of The Electrochemical Society;2011

4. Investigations on InP/InAlAsSb/GaAs Metamorphic High Electron Mobility Transistors with a Dual-Composition-Graded InxGa1−xAs1−ySby Channel and Different Schottky-Barrier Gate Structures;Journal of The Electrochemical Society;2011

5. Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors;Semiconductor Science and Technology;2008-10-21

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