Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP High-Electron-Mobility Structures on GaAs Substrates-Reference-Cited by-同舟云学术

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Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP High-Electron-Mobility Structures on GaAs Substrates

Published:2002-02-28 Issue:Part 1, No. 2B Volume:41 Page:1004-1007
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ouchi Kiyoshi,Mishima Tomoyoshi,Kudo Makoto,Ohta Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=2S/a=1004/pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics;Technical Physics Letters;2019-11

2. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19

3. Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain;Thin Solid Films;2013-02

4. Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs;Solid-State Electronics;2007-06

5. Room temperature photoluminescence evaluation of In0.29Al0.71As/In0.3Ga0.7As/GaAs metamorphic high electron mobility transistor structures;Solid-State Electronics;2007-01

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