Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs

Author:

Liu Dongmin,Hudait Mantu,Lin Yong,Kim Hyeongnam,Ringel Steven A.,Lu Wu

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Novel pseudomorphic InP/InAs0.6P0.4 quantum-well HEMT’s;Hong;Int Electr Dev Meet Tech Dig,1991

2. InP HEMT downscaling for power applications at W band;Medjdoub;IEEE Trans Electr Dev,2005

3. 94GHz high power performances of InAs0.4P0.6 channel HEMTs on InP;Medjdoub;Electr Lett,2005

4. Enoki T, Arai K, Kohzen A, Ishii Y. InGaAs/InP double channel HEMT on InP. Proceedings of 4th InP related materials conference; 1992;14–7.

5. Gas-source molecular beam epitaxy growth of metamorphic InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP high-electron-mobility structures on GaAs substrates;Ouchi;Jpn J Appl Phys,2002

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