InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics-Reference-Cited by-同舟云学术

InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

Published:2019-11 Issue:11 Volume:45 Page:1092-1096
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Maleev N. A.,Vasil’ev A. P.,Kuzmenkov A. G.,Bobrov M. A.,Kulagina M. M.,Troshkov S. I.,Maleev S. N.,Belyakov V. A.,Petryakova E. V.,Kudryashova Yu. P.,Fefelova E. L.,Makartsev I. V.,Blokhin S. A.,Ahmedov F. A.,Egorov A. V.,Fefelov A. G.,Ustinov V. M.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785019110075.pdf

Reference17 articles.

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