Investigations of Novel $\Gamma$-Gate MOS-HEMTs by Ozone Water Oxidation and Shifted Exposure Techniques-Reference-Cited by-同舟云学术

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Investigations of Novel $\Gamma$-Gate MOS-HEMTs by Ozone Water Oxidation and Shifted Exposure Techniques

Published:2011-09 Issue:9 Volume:58 Page:2981-2989
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Ching-Sung,Chou Bo-Yi,Yang Sheng-Han,Hsu Wei-Chou,Wu Chang-Luen,Yang Wen Luh,Liu Don-Gey,Lin Ming-Yuan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5993779/05958594.pdf?arnumber=5958594

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel;IEEE Journal of the Electron Devices Society;2020

2. Al2O3-Dielectric InAlN/AlN/GaN ${\Gamma}$ -Gate MOS-HFETs With Composite Al2O3/TiO2 Passivation Oxides;IEEE Journal of the Electron Devices Society;2018

3. Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3dielectric obtained by ozone water oxidization method;Japanese Journal of Applied Physics;2016-02-26

4. Investigations of TiO2–AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition;IEEE Transactions on Electron Devices;2015-05

5. Recent advances on dielectrics technology for SiC and GaN power devices;Applied Surface Science;2014-05

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