Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3dielectric obtained by ozone water oxidization method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4/a=044102/pdf
Reference27 articles.
1. Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
2. High-performance E-mode AlGaN/GaN HEMTs
3. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
4. Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer
5. MOCVD grown normally-OFF type AlGaN/GaN HEMTs on 4 inch Si using p-InGaN cap layer with high breakdown
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of pH and structure on the channel conductivity of AlGaN/GaN heterostructure based sensors;Sensors and Actuators B: Chemical;2018-09
2. Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications;Journal of the Korean Physical Society;2017-09
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