Fabrication, structural and electrical properties of (1 1 0) localized silicon-on-insulator devices-Reference-Cited by-同舟云学术

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Fabrication, structural and electrical properties of (1 1 0) localized silicon-on-insulator devices

Published:2010-03-09 Issue:4 Volume:25 Page:045014
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Destefanis V,Hartmann J M,Huguenin J L,Delaye V,Samson M P,Boulitreau P,Morand Y,Brianceau P,Arvet C,Gautier P,Monfray S,Skotnicki T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Requirements for ultra-thin-film devices and new materials for the CMOS roadmap

2. Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise inp-Type Inversion Layers on Oxidized Silicon Surfaces

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1. Epitaxy of Strained Si/Si1-xGexHeterostructures;Silicon Technologies;2013-03-19

2. Growth of high Ge content SiGe on (110) oriented Si wafers;Thin Solid Films;2012-02

3. Low temperature selective epitaxial growth of SiCP on Si(110) oriented surfaces;Thin Solid Films;2012-02

4. Critical thickness for plastic relaxation of SiGe on Si(001) revisited;Journal of Applied Physics;2011-10-15

5. Performance of Localized-SOI MOS Devices on (110) Substrates: Impact of Channel Direction;IEEE Electron Device Letters;2011-08

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