Growth of high Ge content SiGe on (110) oriented Si wafers-Reference-Cited by-同舟云学术

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Growth of high Ge content SiGe on (110) oriented Si wafers

Published:2012-02 Issue:8 Volume:520 Page:3179-3184
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hikavyy A.,Vanherle W.,Vincent B.,Dekoster J.,Bender H.,Moussa A.,Witters L.,Hoffman T.,Loo R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise inp-Type Inversion Layers on Oxidized Silicon Surfaces

2. Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics

3. Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112)

4. Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes;IEEE Transactions on Electron Devices;2018-04

2. (Invited) High Ge Content SiGe Thin Films: Growth, Properties and Integration;ECS Transactions;2014-08-12

3. Influence of Ge substrate orientation on crystalline structures of Ge1−Sn epitaxial layers;Thin Solid Films;2014-04

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