Influence of Ge substrate orientation on crystalline structures of Ge1−Sn epitaxial layers-Reference-Cited by-同舟云学术

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Influence of Ge substrate orientation on crystalline structures of Ge1−Sn epitaxial layers

Published:2014-04 Issue: Volume:557 Page:159-163
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Asano Takanori^ORCID,Kidowaki Shohei,Kurosawa Masashi,Taoka Noriyuki,Nakatsuka Osamu,Zaima Shigeaki

Funder

Japan Society for the Promotion of Science

Funding Program for World-Leading Innovative R&D on Science and Technology

Council for Science and Technology Policy

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

2. Ge1−Sn stressors for strained-Ge CMOS

3. Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

4. Low temperature growth of Ge1−Sn buffer layers for tensile–strained Ge layers

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Sn doping on low-temperature growth of Ge epilayers on half-metallic Co2FeSi;Materials Science in Semiconductor Processing;2024-03

2. Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing;Materials Science in Semiconductor Processing;2023-07

3. Epitaxial stabilisation of Ge1 − x Sn x alloys;Journal of Physics D: Applied Physics;2021-06-02

4. Formation and optoelectronic property of strain-relaxed Ge1−x−y Si x Sn y /Ge1−x Sn x /Ge1−x−y Si x Sn y double heterostructures on a boron-ion-implanted Ge(001) substrate;Japanese Journal of Applied Physics;2019-07-10

5. Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates;Solid State Communications;2018-12

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