Critical thickness for plastic relaxation of SiGe on Si(001) revisited
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3656989
Reference21 articles.
1. Strain relaxation kinetics in Si1−xGex/Si heterostructures
2. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
3. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
4. Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)]
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